Schedule
Invited Speakers
-
Ofer Adan,
AMAT, “Extending
Electron Beam Technology
Further/Deeper into the
Metrology Space for 7nm
or Below Process
Development and
Manufacturing”
-
Vladimir Aksyuk,
National Institute of
Standards and
Technology, “Scanning
Probe Technology to Make
Local, Non-Contact
Measurements of Photonic
Circuits”
-
Andy Antonelli, Nanometrics,
“Optical Critical
Dimension Metrology in
Memory and Logic”
-
Ravikiran Attota,
NIST, “Nondestructive
and Economical
Dimensional Metrology of
Deep Structures”
-
Anne Delobbe,
Tescan Orsay, “When Ion
or Electron Channeling
meets Crystal
Orientation Mapping”
-
Arie den Boef,
ASML, “Holistic
Approaches for Improved
Device Overlay and Edge
Placement Error”
-
Alexis Franquet,
Imec, “Hybrid SIMS: How
The Orbitrap Mass
Analyzer Can Improve The
Self-Focusing SIMS
Concept For Advanced
Semiconductor
Structures”
- M. Zahid Hasan, Princeton, “Metrology for Topological Spintronics Materials and Devices”
-
G. Dan Hutcheson,
VLSI Research, Inc.,
“12-2, Moore’s Law in a
Neuromorphic World”
-
Sergei Kalinin,
Oakridge, “Deep Learning
in Atomically Resolved
Imaging: from Learning
Physics to Atom by Atom
Fabrication”
-
David Larson,
AMETEK, “Atom Probe
Tomography: Toward
Improved Productivity
and Correlative Analysis
in the Semiconductor
Industry”
-
Philippe Leray,
Imec, “Machine Learning
and Deep Learning
Opportunities for
Metrology and Process
Control”
-
Thomas Mueller,
Bruker, “Current Status
and Future Prospects for
SPM for Supporting the
Semiconductor Industry”
-
George Orji, National
Institute of Standards
and Technology,
“Metrology Requirements
for Next Generation of
Semiconductor Devices”
-
Yuji Otsuka, Toray
Research Center,
“Three-Dimensional
Structural and
Compositional Analysis
of MTJ by STEM/EDX
Tomography”
-
Sung Park, Molecular
Vista, “PiFM Nanoscale
Chemical Probe for Novel
Patterning Applications”
-
Oliver Patterson,
HMI, “Advancement on
Massive Parallel
Electron Beam Inspection
Technology for 7nm or
Below Process
Development and
Manufacturing”
-
Brennan Peterson,
KMLabs, “Current Status
and Future Possibilities
of HHG Sources for
Characterization/Metrology
in the Semiconductor
Industry”
-
Gurtej Sandhu,
Micron, “Frontiers in
Memory Technology and
Metrology Drivers”
-
Christian Schmidt,
NVIDIA, “Existing and
Future Characterization
Needs”
-
John Sturtevant, Mentor,
“Interlayer Edge
Placement Hotspots:
Quantifying and
Expanding Combined
CD/Overlay Process
Window”
-
Valeriy Sukharev,
Mentor Graphics,
“Electromigration Power
Grid Checking – Novel
Design and Reliability
Metrology”
-
Rudolf Tromp,
IBM, “Low Energy
Electron Resist
Exposures”
-
Alok Vaid,
Global Foundries, CD,
“Critical
Dimension, Thickness,
and Emerging Metrology
Solutions for Three
Dimensional Transistors
and Multi-step
Patterning”
-
Wilfried Vandervorst,
Imec, “Accurate and
Precise Analysis of
Nanoscale Semiconductor
Devices with Atmosphere
Tomography: A
Physicist’s Dream or an
Analyst’s Nightmare”
-
Paul van der Heide,
Imec, “What Does
Near-line TEM Bring to
the Table for the CMOS
Manufacturing Industry”
-
Carl Williams,
National Institute of
Standards and
Technology, “Impact of
Quantum Information
Science on the Future of
Nanoelectronics”
-
Shay Wolfling,
Nova, “AI and Machine
Learning for Advanced
Semiconductor Metrology
and Process Control”
-
Daniel Worledge,
IBM, “Metrology for the
Manufacturing Needs of
MRAM”
-
Yalin Xiong,
KLA Tencor, “Advancement
on Optical Inspection
Technology for 7nm or
Below Process
Development and
Manufacturing”
-
Ian Young,
Intel, “Beyond CMOS
Computing: Prospects and
Best Bets”
-
Wenbing Yun,
Sigray, “Micro X-ray
Fluorescence for
Integrated Dopants and
Thin Film Analysis”
-
Ying Zhou,
Intel Corporation,
“Integrated Process
Learnings with Hybrid
Characterization”
- Ehrenfried Zschech, Fraunhofer IKTS Dresden, “Really Nondestructive High-resolution X-ray Tomography for Advanced Packaging Applications”
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