Paper SU+2D+MS+NS-TuA11
Fabrication and Characterization of Thermal Treated Si/Si+Ge Thin Films For Energy Harvesting

Tuesday, October 31, 2017, 5:40 pm, Room 5 & 6

Thermoelectric thin film devices were prepared from the alternating nanolayers of Si and Si+Ge to form the Si/Si+Ge thin films structures using DC/RF magnetron sputtering system. Fabricated thermoelectric devices were treated at different temperatures for an hour for each case to form quantum (nano) structures in the alternating nanolayers of Si and Si+Ge to increase both the Seebeck coefficients and the electrical conductivity and decrease the thermal conductivity. The prepared Si/Si+Ge thin film thermoelectric devices were characterized using the Seebeck coefficient measurement; the four probe van der Pauw resistivity measurement and the laser thermal conductivity systems for in-plane geometries. The surface morphology of the fabricated thermoelectric films is characterized using Scanning Electron Microscope (SEM+EDS). Thermal treatment showed positive effects on the thermoelectric properties of Si/Si+Gethin films on the selected temperatures. The findings will be presented during the meeting.

Acknowledgement

Research was sponsored by NSF with grant numbers NSF-HBCU-RISE-1546965, DOD with grant numbers W911 NF-08-1-0425, and W911NF-12-1-0063, U.S. Department of Energy National Nuclear Security Administration (DOE-NNSA) with grant numbers DE-NA0001896 and DE-NA0002687.