| AVS 64th International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Monday Sessions |
| Session SP+AS+NS+SS-MoM |
| Session: | New Imaging and Spectroscopy Methodologies |
| Presenter: | Michael Lodge, University of Central Florida |
| Authors: | M.S. Lodge, University of Central Florida G. Chang, National University of Singapore B. Singh, National University of Singapore J. Hellerstedt, Monash University, Australia M.T. Edmonds, Monash University, Australia D. Kaczorowski, Polish Academy of Sciences M.M. Hosen, University of Central Florida M. Neupane, University of Central Florida H. Lin, National University of Singapore, Singapore M. Fuhrer, Monash University, Australia B. Weber, Nanyang Technological University, Singapore M. Ishigami, University of Central Florida |
| Correspondent: | Click to Email |
3D Dirac semimetals are a class of materials whose bulk electronic states are protected by topology, presenting intriguing new systems in which to study the rich physics of the quasiparticles that they host. One such system is the nodal line Dirac semimetal, wherein the conductance and valence bands have a line-like crossing along a closed loop in momentum space and disperse linearly in the vicinity of the resulting line node. This configuration gives rise to the prediction of exotic phenomena such as spin vortex rings, diverging mobility in the limit of vanishing chemical potential, and a linearly increasing dependence of the conductivity on temperature. Many of these compounds have their line node located hundreds of meV above the Fermi level, making direct observation of the line-node inaccessible to experimental techniques such as angle resolved photoemission spectroscopy (ARPES). We employ spectroscopic imaging scanning tunneling microscopy (SI-STM) at 4.5K to visualize the quasiparticle interference with point defects in zirconium silicon sulfide (ZrSiS). In combination with numerical modeling, we identify six groups of quasiparticle scattering vectors allowed within the material, and show that topological protection of the electronic bands is relaxed in the presence of certain defects. We also estimate the location of the line node.