AVS 64th International Symposium & Exhibition
    Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic Tuesday Sessions
       Session SA-TuP

Paper SA-TuP2
Inelastic Background Analysis using a Reference on Technologically Relevant Samples: Determination of Input Parameters

Tuesday, October 31, 2017, 6:30 pm, Room Central Hall

Session: Synchrotron and FEL-Based Analysis Poster Session
Presenter: Charlotte Zborowski, CEA/LETI-University Grenoble Alpes, France
Authors: C. Zborowski, CEA/LETI-University Grenoble Alpes, France
O.J. Renault, CEA/LETI-University Grenoble Alpes, France
A. Torres, CEA/LETI-University Grenoble Alpes, Francee
Y. Yamashita, NIMS, Japan
G. Grenet, Inl, Ecl, France
S. Tougaard, SDU, Denmark
Correspondent: Click to Email

Abstract: Recently, the advent of Hard X-ray Photoelectron Spectroscopy (HAXPES) has enabled to study deeply buried interfaces [1,2]. It was shown that by combining HAXPES with inelastic background analysis [3], structures at a depth >50 nm can be studied. This study was performed on technologically relevant High Electron Mobility Transistors presenting different thicknesses of the Ta/Al electrode on an Al0.25Ga0.75N/AlN/GaN heterostructure. HAXPES was performed at the Spring-8 synchrotron using 8 keV photons. Here, we present a non-destructive solution to get information on deeply buried layers and interfaces. This is a refined analytical method, based on the use of a reference spectrum, for determining the required input parameters, i.e. the inelastic mean free path calculated using the TPP-2M formula and the inelastic scattering cross-section. As the spectra present marked plasmons, after the elastic peaks, we used an average of individual inelastic scattering cross-sections [4], K, which can be determined from Reflection Electron Energy-Loss Spectra. The use of a reference sample gives extra constraints which make the analysis faster to converge towards a more accurate result. The results were determined with the best Ta 3p3/2 corrected spectra calculated with different cross-sections and the resulting in-depth distribution was found with an accuracy better than 5% and in good agreement with the TEM results. We have also successfully used this technique to study structures at a depth >70 nm.

References

[1] P. Risteruci et al., Applied Physics Letters, 104, (2014).

[2] C. Zborowski et al., Applied Surface Science, (Submitted).

[3] S. Tougaard, Journal of Electron Spectroscopy and Related Phenomena, 178–179 (2010).

[4] P. Risterucci et al., Applied Surface Science, 402, (2017).

Part of this work was performed at the Nanocharacterization Platform of CEA-MINATEC. NIMS and Spring-8 are acknowledged for providing beamtime and the staff of the BL15-XU beamline for their assistance during the experiment.