AVS 64th International Symposium & Exhibition
    Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic Tuesday Sessions
       Session SA+MI-TuM

Paper SA+MI-TuM12
Monitoring the Non-Metal to Metal Transition and Ultrafast Charge Carrier Dynamics of Supported Clusters by Femtosecond XUV Photoemission Spectroscopy

Tuesday, October 31, 2017, 11:40 am, Room 9

Session: Overcoming the Temporal and Spatial Limits of X-Ray Scattering Methods for In-Situ Analysis
Presenter: Mihai Vaida, University of Central Florida
Authors: M.E. Vaida, University of Central Florida
M. Marsh, University of California at Berkeley
B. Lamoureux, University of California at Berkeley
S.R. Leone, University of California at Berkeley
Correspondent: Click to Email

Understanding the electronic structure and charge carrier dynamics of supported clusters is extremely important due to their many potential applications in photochemistry and catalysis. Time resolution, surface sensitivity and element specificity are technical ingredients required to investigate ultrafast photoinduced processes of charge migration, localization and recombination at clusters on a solid surface. All these requirements are fulfilled by a new experimental technique based on pump-probe photoemission spectroscopy (PES) in conjunction with femtosecond extreme ultraviolet (XUV) laser pulses that will be presented in this contribution. The ultrafast electron and hole charge state dynamics is investigated by monitoring the ultrafast photoinduced transient charging of the clusters at surface by core level and Fermi level photoelectron spectroscopic shifts.

Gold clusters grown on 10 ML MgO(100)/Mo(100) are investigated as a model system for using static XUV photoemission as a probe of electronic character versus cluster size. As the size of the Au clusters is increased, a gradual shift in the photoemission onset up to the Fermi energy indicates a change in the character of the gold clusters from non-metallic to metallic. The results are compared with theoretical work and previous investigations to validate the XUV-PES method. Static photoemission is then further utilized to monitor the electronic structure of Zn clusters on p‑Si(100) as a function of Zn deposition. The transition from non-metallic to metallic Zn character is observed at 0.16 ML of Zn coverage. Furthermore, the femtosecond pump-probe XUV-PES technique is employed to induce a charge transfer from the p-Si(100) substrate to the Zn clusters and to measure in real time the charge trapping at the Zn clusters as well as the subsequent charge relaxation. The ultrafast charge carrier dynamics investigations are performed as the Zn dimensionality is increased from small clusters composed of a very few atoms to large collections of atoms to extended Zn films.