| AVS 64th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology Division | Thursday Sessions |
| Session NS-ThP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | Juhyun Bae, Sungkyunkwan University, Republic of Korea |
| Authors: | J.H. Bae, Sungkyunkwan University, Republic of Korea I.S. Chung, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Thermal oxidation of Ge has been investigated under high pressure ambient to suppress GeO vaporization. Ge oxide was grown in the temperature range of 450 °C to 550 °C in dry O2 ambience at three different pressures such 10, 30, and 50 atm. The physical property of GeO2 is analyzed using the transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Additionally, C-V characteristics were obtained from GeO2/Ge MOS capacitors. The hysteresis in C-V characteristics and the interface trap density (Dit) are significantly reduced as the pressure increases. Consequently, the properties of both GeO2 film and GeO2/Ge interface are successfully improved by suppressing GeO volatilization utilizing high pressure.