| AVS 64th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology Division | Thursday Sessions |
| Session NS-ThP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | Westly Nolting, SUNY Polytechnic Institute |
| Authors: | W. Nolting, SUNY Polytechnic Institute C. Durcan, SUNY College of Nanoscale Science and Engineering V. LaBella, SUNY Polytechnic Institute |
| Correspondent: | Click to Email |
Nanoscale fluctuations in the electrostatics of a metal semiconductor interface impact performance and are important to understand and measure, which can be accomplished with ballistic electron emission microscopy (BEEM), an STM based technique. In this work, we perform BEEM on Cr/Si Schottky contacts to visualize the interface electrostatics to nanoscale dimensions to understand the effects of silicide formation. This is accomplished by acquiring tens of thousands of spectra on a regularly spaced grid and fitting the results to determine the local Schottky barrier height. Monte-Carlo modeling is utilized to calculate the barrier height distributions that includes scattering of the electrons that traverse the metal layer and a distribution of electrostatic barriers at the interface. Improved agreement between the model and the data is achieved when specifying more than one barrier height, providing a signature of silicide formation. This, and recent work extended this method to the W/Si interface will be presented.