| AVS 64th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology Division | Monday Sessions |
| Session NS+HC+SS-MoA |
| Session: | Oxides in Nanotechnology |
| Presenter: | Paris Blaisdell-Pijuan, University of Chicago |
| Authors: | P. Blaisdell-Pijuan, University of Chicago L.E. Ocola, Argonne National Laboratory |
| Correspondent: | Click to Email |
We have characterized the growth of ZnO using sequential infiltration synthesis (SiS) on PS-b-PMMA block copolymers (BCP) of spherical and cylindrical sub-20nm morphologies and studied how the photoluminescence of these nanostructures varies per its seed layer. Investigation of these structures was done using atomic force microscopy (AFM), spectrofluorometry, Raman spectroscopy, and scanning electron microscopy (SEM). We report blue-shifted photoemission at 335nm (3.70eV), suggesting quantum confinement effects. Samples of ZnO prepared with an alumina seed layer showed additional defect state photoemission at 470nm and 520nm for spherical and cylindrical BCP morphologies, respectively. Defect photoemission was not observed in samples prepared without a seed layer. No Raman peaks were observed for any samples with less than four cycles of ZnO, implying the absence of phonons and the functionality of these ZnO nanostructures as isolated emitters. Rapid thermal annealing of samples in air above 500 oC began to coalesce and show photoemission characteristic of bulk ZnO at 370nm (3.35eV). Our work demonstrates that ZnO nanostructures grown on PS-b-PMMA via SiS are advantageous in uniformity and size, and exhibit unique fluorescence properties. These observations suggest that infiltrated ZnO in PS-b-PMMA nanostructures lends itself to a new regime of applications in photonics and quantum materials.