Invited Paper NS+EM+MI+SS-TuM1
Nanometrology and Nanocharacterization in Nanoelectronics
Tuesday, October 31, 2017, 8:00 am, Room 19
As the so called technology node for integrated circuits moves below 10 nm, new transistor and interconnect materials as well as new device structures are moving from research into development. Pseudomorphic semiconductor films such as Si1-xGex on Si are expected to transition to Ge/Si1-xGex/Si or to III-V epilayers. The current lithographic processing used to pattern FinFETS is based on the Quadruple Spacer Patterning process which can result in two values of pitch walking. This greatly complicates in-line metrology. The FinFET itself will likely be replaced by nanowire transistors having multiple vertically stacked nanowire channels. Another alternative is the nano-sheet transistor. Beyond these evolutionary changes, longer term devices based on 2D materials are being investigated. These include graphene, transition metal dichalcogenides, and topologically protected materials. This talk will cover the advanced measurements being used to address the challenges associated with these new materials and structures. The talk will cover measurement methods including high resolution X-ray diffraction (XRD), XRD reciprocal space mapping, Mueller Matrix spectroscopic ellipsometry base scatterometry, and advanced electron microscopy.