AVS 64th International Symposium & Exhibition
    MEMS and NEMS Group Monday Sessions
       Session MN+EM+NS-MoA

Paper MN+EM+NS-MoA8
Tunable Resistivity in Inkjet Printed Circuit by Plasma Reduction of Particle-free, Stabilizer-free Ink

Monday, October 30, 2017, 4:00 pm, Room 24

Session: Nano Optomechanical Systems/Multiscale Nanomanufacturing
Presenter: Christian Zorman, Case Western Reserve University
Authors: Y. Sui, Case Western Reserve University
S. Ghosh, Case Western Reserve University
C. Miller, Case Western Reserve University
R.M. Sankaran, Case Western Reserve University
C.A. Zorman, Case Western Reserve University
Correspondent: Click to Email

Inkjet printing offers a low-cost, rapid methodology to produce patterned metal thin films on flexible substrates. The most commonly used ink consists of colloidal suspensions of nanoparticles prepared by wet chemical reduction of metal salts. Even after concentrating the nanoparticles through solution processing, the as-printed ink usually exhibits a low conductivity due to the presence of organic molecules that help stabilize the nanoparticles from agglomeration and precipitation. High temperature (>200 C) treatment is then required after printing to remove the insulating organics and sinter the nanoparticles. The thermal step can limit printing on polymers such as PDMS, paper, and 3D printed polymers.

Here, we present a particle-free, stabilizer-free ink and a low-temperature plasma reduction process to produce electrically conductive metallic patterns on temperature-sensitive without any additional thermal step. The ink is comprised of a metal salt, a solvent, and a viscosity modifier, and is absent of any large organic molecules that cannot be evaporated after printing. The as-printed and dried metal salt is then treated with a plasma formed in a low-pressure argon environment. Even without the presence of highly reactive atomic and molecular hydrogen, this process is found to be sufficient to reduce the metal salt to highly conductive metal with resistivities approaching bulk values. More importantly, we found the resistivity of the printed structure can be tuned over a range of 2 orders of magnitude by varying the plasma power and treatment time. Thus far, we have demonstrated this general approach for silver (Ag) and tin (Sn) from silver nitrate (AgNO3) and tin (II) chloride (SnCl2), respectively. Details of the material properties as assessed by materials characterization and electrical conductivity measurements, device application to RC filter circuits, and applicability to other metals will also be discussed.