Invited Paper EM-MoA1
2D Materials for Advanced Devices: Integration Challenges and Opportunities

Monday, October 30, 2017, 1:40 pm, Room 14

The size reduction and economics of integrated circuits, captured since the 1960’s in the form of Moore’s Law, continues to be challenged. Challenges include addressing aspects associated with truly atomic dimensions, while the cost of manufacturing is increasing such that only 3 or 4 companies can afford leading edge capabilities. To address some of the materials physical limitations, “2D materials” such as graphene, phosphorene, h-BN, and transition metal dichalcogenides have captured the imagination of the electronics research community for advanced applications in nanoelectronics and optoelectronics. Among 2D materials “beyond graphene,” some exhibit semiconducting behavior, such as transition-metal dichalcogenides (TMDs), and present useful bandgap properties for applications even at the single atomic layer level. Examples include “MX₂”, where M = Mo, W, Sn, Hf, Zr and X = S, Se and Te

Integration of these materials with semiconductor industrial fabrication processes presents a number of challenges. For example, several synthesis methods have been employed to study 2D material thin film properties including mechanical/liquid exfoliation, chemical bath deposition, vapor phase deposition, and molecular beam epitaxy (MBE). From a manufacturability and cost perspective, vapor phase (including chemical and atomic layer) deposition are the subject of intense research activity in the electronics industry, while MBE methods facilitate the research of large thin films in advance of precursor development for CVD and ALD.

This presentation will examine the state-of-the-art of these materials in view of our research on 2D semiconductors, and the challenges and opportunities they present for electronic and optoelectronic applications. [1]

This work is supported in part by: (i) the SWAN Center, a SRC center sponsored by the Nanoelectronics Research Initiative and NIST, (ii) the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA, (iii) the US/Ireland R&D Partnership (UNITE) under the NSF award ECCS-1407765, and (iv) the Erik Jonsson Distinguished Chair in the Erik Jonson School of Engineering and Computer Science at the University of Texas at Dallas.

1. S. J. McDonnell and R.M.Wallace, "Critical Review: Atomically-Thin Layered Films for Device Applications based upon 2D TMDC Materials", Thin Solid Films, 616, 482-501 (2016).