| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Tuesday Sessions |
| Session EM+NS-TuM |
| Session: | Nanostructures and Nanometer Films for Electronic and Photonic Devices |
| Presenter: | Hilal Cansizoglu, University of California, Davis |
| Authors: | H. Cansizoglu, University of California, Davis Y. Gao, University of California, Davis K.G. Polat, University of California, Davis S. Ghandiparsi, University of California, Davis C. Bartolo Perez, University of California, Davis A. Kaya, University of California, Davis H.H. Mamtaz, University of California, Davis A.S. Mayet, University of California, Davis E. Ponizovskaya Devine, W&WSens Devices, Inc. Y. Yamada, University of California, Santa Cruz A.F. Elrefaie, W&WSens Devices, Inc. S.Y. Wang, W&WSens Devices, Inc. M.S. Islam, University of California, Davis |
| Correspondent: | Click to Email |
Surface-illuminated photodiodes (PDs) for ultra-fast data transmission are typically GaAs-based non-CMOS compatible detectors. Silicon (Si) has long been ignored for being a material of choice in ultra-fast communication links due to its poor responsivity for the wavelengths >800 nm at data rates 10 Gb/s or higher. Recent demonstration of CMOS compatible surface-illuminated Si PDs with photon-trapping micro-/nanoholes paves the way for the use of Si at 25 Gb/s or higher data transmission rate. Such PDs provided ≤30 ps full-width at half-maximum (FWHM) and above 50% quantum efficiency (QE) at 850nm, which is over 400% higher than the QE that a similar Si PD without absorption-enhancement micro-/nanoholes can provide. The micro/nanoholes create an ensemble of modes that radiate laterally by photon trapping and slow light effects, resulting in absorption enhancement in a very thin layer of Si (<2µm) which is required for high speed operations. The broadband efficiency enhancement by photon-trapping micro-/nanoholes enable Si to be considered as the PD material at longer wavelengths (>870 nm) which is below the room temperature bandgap of GaAs. Such broadband and enhanced efficiency of Si integrated with micro-/nanoholes can be useful for applications such as short wavelength division multiplexing (SWDM, 850-980 nm) for data centers, automotive laser radar systems (LIDAR, 850 or 905 nm) and high-performance computers (990-1065 nm). The CMOS-compatible fabrication of micro-/nanoholes can allow Si PDs to be monolithically integrated with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), which can increase the achievable data rate to more than 50 Gb/s.