| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+MI+NS+SP+SS-ThM |
| Session: | Photonics, Optoelectronics, and Light Manipulation |
| Presenter: | Michael Filler, Georgia Institute of Technology |
| Authors: | W. Hu, Georgia Institute of Technology M.A. Filler, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Localized surface plasmon resonances (LSPRs) present exciting opportunities to improve the spatial and temporal control of chemistry at semiconductor surfaces. While the ultraviolet and visible LSPRs supported by metallic nanoparticles are known to impact surface chemistry, heavily-doped semiconductor nanocrystals promise similar capabilities in the near and mid-infrared. Here, we use time-resolved in situ infrared spectroscopy to study the influence of mid-infrared LSPRs on a model interfacial process: desorption. We find that the molecular desorption rate for a range of "beacon" molecules (e.g., indole, benzoic acid) on indium tin oxide (ITO) nanocrystals is enhanced by as much as 2x upon illumination with mid-infrared light (~0.6-0.1 eV) at room temperature. The desorption rate is linearly dependent on light intensity, indicating a single photon process. Experiments as a function of LSPR energy, nanocrystal film thickness, and adsorbate concentration provide clues as to the mechanism of the enhancement. Our findings open new avenues to leverage low energy photons for manipulating chemical reactions on the surfaces of heavily-doped semiconductors.