Paper 2D-ThP5
Growth and Characterization of MoTe₂ on GaTe by Molecular Beam Epitaxy

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

MoTe₂ exist in semiconducting (2H) and metallic (1T’) polymorphs. The potential for switching between these phases makes it a promising 2D material for phase change applications. In this study we are investigating van der Waals epitaxy of single layer MoTe₂ on different substrates and growth conditions. Specifically, we aim at selectively growing 2H or 1T’ phases by molecular beam epitaxy. Using van der Waals substrates with symmetries similar to the 2H or 1T’ phases of MoTe₂ we are aiming at obtaining epitaxial single crystalline monolayer materials. Specifically, we propose GaTe to be a suitable substrate for the growth of 1T’-MoTe₂. We characterize the substrates and MoTe₂-films in-situ by scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS) and angle resolved photoemission spectroscopy (ARPES). Furthermore the thermal stability and phase change behavior of these monolayers are investigated.