| AVS 64th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Thursday Sessions |
| Session 2D-ThP |
| Session: | 2D Materials Poster Session |
| Presenter: | Soyeong Kwon, Ewha Womans University, Republic of Korea |
| Authors: | S. Kwon, Ewha Womans University, Republic of Korea E. Kim, Ewha Womans University, Republic of Korea Y. Cho, Ewha Womans University, Republic of Korea Y. Kim, Korea Institute of Materials Science B. Cho, Korea Institute of Materials Science D.-H. Kim, Korea Institute of Materials Science D.-W. Kim, Ewha Womans University, Republic of Korea |
| Correspondent: | Click to Email |
MoS2, a representative 2D atomically thin semiconductor, has unique optical, electrical, and mechanical properties. There have been intensive research efforts to fabricate MoS2-based optoelectronic devices due to its sizable band gap (1.2 ~ 1.8 eV). In this work, we investigated transport behaviors of MoS2 layers, grown by chemical vapor deposition (CVD), in dark and under illumination of visible light [1,2]. CVD techniques can produce high-quality, large-area MoS2 thin films with a high throughput. Surface potential maps near the electrode/MoS2 contacts were obtained using Kelvin probe force microscopy, which clearly showed how the potential gradient near the contacts could affect the collection of the photo-generated carriers. The dark- and photo-current behaviors of the devices in dark and light were measured while varying the sample temperature (100 ~ 300 K). The temperature dependent current-voltage characteristics helped us to understand the carrier transport mechanism and its roles in the photo-detection of the CVD-grown MoS2 thin films.
1. Y. Cho et al., ACS Appl. Mater. Interfaces8, 21612 (2016).
2. Y. Cho et al., ACS Appl. Mater. Interfaces9, 6314 (2017).