AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP22
Single Atom Manipulation and Controllable Atom by Atom Assembly in 2D Materials via Scanning Transmission Electron Microscopy

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

Session: 2D Materials Poster Session
Presenter: Sergei Kalinin, Oak Ridge National Laboratory
Authors: S.V. Kalinin, Oak Ridge National Laboratory
O. Dyck, Oak Ridge National Laboratory
S. Kim, Oak Ridge National Laboratory
S. Jesse, Oak Ridge National Laboratory
Correspondent: Click to Email

Fabrication of structure atom-by-atom has remained one of the longest-held dreams of nanoscience, as a key element of nanotechnology and penultimate step for understanding physics and chemistry on the atomic level. The development of scanning tunneling microscopy (STM) in the early 1980s has demonstrated the potential of an atomically sharp tip to induce atomic motion on a surface, originally perceived to be detrimental to microscope operation. The work by Eigler at IBM in the early 1980s demonstrated that tip induced atomic motion can be used for the assembly of functional atomic structures, an accomplishment believed to be one of the key factors that lead to the nanotechnology revolution of the last decades. However, STM operation necessitates low temperature ultra-high vacuum environments and typically results in structures confined to reactive surfaces. Correspondingly, it took over 20 years to transition from atomic manipulation by STM to viable pathways for single-atom devices. This in turn, necessitates the search for alternative methods for single atom manipulation and atom-by-atom assembly.

Here we demonstrate that the sub-atomically focused beam of a scanning transmission electron microscope (STEM) can be used to controllably manipulate individual dopant atoms in a 2D graphene lattice. We demonstrate the manipulation of adsorbed source materials and the graphene lattice with the electron beam such that individual vacancy defects can be controllably passivated by Si substitutional atoms. We further demonstrate that these Si defects may be directed through the lattice via e-beam control or modified to form new defects which can incorporate new atoms into the graphene lattice. We further explore the application of beam to probe local dynamics within individual or between adjacent atomic sites. These studies demonstrate the potential of STEM for atom-by-atom nanofabrication and fundamental studies of chemical reactions in 2D materials on the atomic level.

Research supported by Oak Ridge National Laboratory’s Center for Nanophase Materials Sciences (CNMS), which is sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy (S.V.K.), and by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy (O.D, S.K.,S.J.).