AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP18
Exploration of Hybrid 2DEG/Ferroelectric Heterostructure Fabrication Methodology

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

Session: 2D Materials Poster Session
Presenter: Stephan Young, University of Missouri - Kansas City
Authors: S.M. Young, University of Missouri - Kansas City
E.J. Moon, University of Missouri - Kansas City
R. Doucette, University of Missouri - Kansas City
A.N. Caruso, University of Missouri - Kansas City
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The hybrid two-dimension electron gas (2DEG)/ferroelectric (FE) heterostructure system has many promising applications, including field effect transistors and non-volatile memory. Such devices exploit the ambipolar field effect, utilizing the high local electric field produced by the FE substrate to shift the Fermi level in the 2DEG. Thus, controlling magnitude and direction of polarization of the FE can significantly alter conductivity and majority charge carrier in the 2DEG. FE/2DEG hybrid devices are typically fabricated by transferring the 2DEG onto the FE substrate. However, this process often introduces adsorbates onto the surface of the 2DEG and FE, resulting in a poor interface and degrading the electric field at the 2DEG. This problem can be partially mitigated by improving the transfer process, but direct growth is a path to eliminate the problem entirely. This work explores the effect of different transfer processes in comparison to chemical vapor deposition growth of 2DEG’s directly on FE substrates. The study aims to elucidate the interfacial interaction between 2DEG’s (i.e. transition metal dichalcogenides and graphene) and low-coercivity, high-remnant-polarization perovskite ferroelectrics. Characterization of the 2DEG domain size was completed with atomic force microscopy, the number of layers confirmed with Raman spectroscopy, and the conductivity of each growth was measured.

This work was supported by the Office of Naval Research (ONR) under N00014-16-1-2067.