AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D+MI-ThM

Paper 2D+MI-ThM4
A Quantum Berry Phase Switch in Circular Graphene Resonators

Thursday, November 2, 2017, 9:00 am, Room 15

Session: Novel Quantum Phenomena in 2D Materials
Presenter: Daniel Walkup, NIST/CNST
Authors: D. Walkup, NIST/CNST
F. Ghahari, NIST/CNST
C. Gutierrez, NIST/CNST
J.F. Rodriquez-Nieva, Harvard University
Y. Zhao, NIST/CNST
J. Wyrick, NIST/CNST
F.D. Natterer, NIST/CNST
W.G. Cullen, NIST/CNST
K. Watanabe, National Institute for Materials Science, Japan
T. Tanaguchi, National Institute for Materials Science, Japan
L.S. Levitov, MIT
N.B. Zhitenev, NIST/CNST
J.A. Stroscio, NIST/CNST
Correspondent: Click to Email

In graphene and other 2D Dirac materials, the band structure has the property that momentum-space paths enclosing the Dirac point pick up a Berry phase of π. In a uniform magnetic field, this leads to a special quantization rule and an N=0 Landau level at the Dirac point. In a circular graphene resonator, weak magnetic fields can tune the quantized electron orbits between states with Berry phases of zero and π, leading to a discontinuous jump in the quantum energy level as a function of applied field. Here we report scanning tunneling microscopy and spectroscopy (STM/S) studies of circular resonators fabricated in p-n junction rings in graphene/hBN backgated devices. We observe direct signatures of a Berry-phase-induced switching of the resonator states measured with scanning tunneling spectroscopy as a function of magnetic field. The telltale signature is a sudden and large increase in the energy of angular-momentum states in the graphene p-n junction resonators when a small critical magnetic field is reached, in agreement with theoretical calculations of Dirac potential wells.