AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Monday Sessions
       Session 2D+MI-MoA

Paper 2D+MI-MoA8
Anisotropic 2D Palladium Diselenide with High Mobility for Air-stable Electronics

Monday, October 30, 2017, 4:00 pm, Room 15

Session: Novel 2D Materials
Presenter: Akinola Oyedele, University of Tennessee
Authors: A. Oyedele, University of Tennessee
L. Liang, Oak Ridge National Laboratory
A.A. Puretzky, Oak Ridge National Laboratory
S. Yang, Oak Ridge National Laboratory
A. Strasser, Oak Ridge National Laboratory
C.M. Rouleau, Oak Ridge National Laboratory
B.G. Sumpter, Oak Ridge National Laboratory
D.B. Geohegan, Oak Ridge National Laboratory
K. Xiao, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Correspondent: Click to Email

Two-dimensional crystals are emerging materials for the realization of nanoelectronic devices including transistors, photodetectors, and chemical sensors. These ultra-thin electronics require candidate systems with high carrier mobility, sizeable and tunable bandgaps, and air stability, which are important for high-speed, durable applications. We present a new candidate, palladium diselenide (PdSe2), with a similar puckered structure to black phosphorus, into the growing family of 2D materials. PdSe2 exhibits a strong layer-dependent bandgap variation from ~0.2 eV (bulk) to ~1.3 eV (monolayer), and an electron mobility as high as ~330 cm2V-1s-1 for few-layer systems. Due to their low-symmetry, PdSe2 exhibits very interesting anisotropic behavior and the strong interlayer interaction is revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Unlike, black phosphorus, PdSe2 is air-stable, thus making it a promising candidate that will spark interest for 2D electronics.

Acknowledgement: This work was conducted at the Center for Nanophase Materials Sciences (CNMS), which is a DOE Office of Science User Facility.