AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D+AS+SA+SP-TuM

Invited Paper 2D+AS+SA+SP-TuM3
Surface and Interface Properties of 2D MoS2 and WS2 Materials

Tuesday, October 31, 2017, 8:40 am, Room 15

Session: 2D Materials Characterization including Microscopy and Spectroscopy
Presenter: Chia-Seng Chang, Institute of Physics, Academia Sinica, Taiwan, Republic of China
Authors: C.-S. Chang, Institute of Physics, Academia Sinica, Taiwan, Republic of China
Y.H. Lee, National Tsing-Hua University, Taiwan, Republic of China
Correspondent: Click to Email

Two dimensional layered transition metal dichalcogenides (2D TMD), such as MX2 (M = Mo, W and X = S, Se), have offered exciting new physics and chemistry, as well as potential applications in energy harvesting, electronics, and optoelectronics. Surface and interface properties of these 2D materials are fundamental to further advance them on scientific exploration and device fabrication. In this talk, we will demonstrate the growth of various TMD monolayers using ambient-pressure chemical vapor deposition. The quality of a MS2 monolayer was examined by scanning probe microscopy, electron microscopy, and optical spectroscopy. We will discuss the key issues associated with the surfaces and interfaces of these materials.