| AVS 64th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Tuesday Sessions |
| Session 2D+AS+SA+SP-TuM |
| Session: | 2D Materials Characterization including Microscopy and Spectroscopy |
| Presenter: | Chia-Hao Chen, National Synchrotron Radiation Research Center, Taiwan, Republic of China |
| Authors: | L.Y. Chang, National Synchrotron Radiation Research Center, Taiwan, Republic of China Y.-X. Wang, National Tsing Hua University, Republic of China Y.-H. Ku, National Tsing Hua University, Republic of China Y.-C. Kuo, National Synchrotron Radiation Research Center, Taiwan, Republic of China H.-W. Shiu, National Synchrotron Radiation Research Center, Taiwan, Republic of China C.-H. Chen, National Synchrotron Radiation Research Center, Taiwan, Republic of China |
| Correspondent: | Click to Email |
Semiconductor heterojunction (HJ) band alignment is the most important factor for the functioning of the HJ-based devices. Therefore, the prediction and determination of the HJ band offset is always a scientifically interesting and technologically important topic. As the 2D materials emerged as the building blocks for the devices with molecular thickness, the determination of band alignment of the van der Waals HJs is becoming a critical issue.
Due to the nature of the molecular thickness and the lack of large area 2D crystal, a microscope with surface sensitivity is an ideal tool to study the fundamental properties of the 2D heterostructures.
In this regard, we have employed a synchrotron radiation based scanning photoelectron spectromicroscopy (SPEM) to study the chemical and electronic structures of the van der Waals HJs, include the single-layer transition metal dichalcogenides, and graphene/GaN HJs. In this presentation, I will report some of the band alignments of these 2D semiconductor heterostructures.