AVS 62nd International Symposium & Exhibition
    Thin Film Thursday Sessions

Session TF+AS+NS+SA-ThM
Thin Film: Growth and Characterization, Optical and Synchrotron Characterization I

Thursday, October 22, 2015, 8:00 am, Room 111
Moderator: Divine Kumah, North Carolina State University


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Click a paper to see the details. Presenters are shown in bold type.

8:00am TF+AS+NS+SA-ThM1 Invited Paper
Oxynitride Thin Films by Reactive Radiofrequence Magnetron Sputtering - Versatile Materials for Optical Applications
Angelique Bousquet, A. Farhaoui, F. Zoubian, C. Taviot-Gueho, J. Cellier, E. Tomasella, Institut de Chimie de Clermont-Ferrand, France
8:40am TF+AS+NS+SA-ThM3 Invited Paper
Surface Science in The Wild: Using Synchrotron Radiation and Lab Grown Thin Films to Understand The Behavior Of SiC in Accident Tolerant Nuclear Fuels
Jeffery Terry, Illinois Institute of Technology
9:20am TF+AS+NS+SA-ThM5
iTF Modulus Solution with xProbe Applications for Ultra-thin Film Systems (<=10nm)
Anqi Qiu, A. Romano, Hysitron, Inc.
9:40am TF+AS+NS+SA-ThM6
Real-time Study of Plasma Enhanced Atomic Layer Epitaxy of InN Films by Synchrotron X-ray Methods
Neeraj Nepal, V. Anderson, S.D. Johnson, B. Downey, D. Meyer, U.S. Naval Research Laboratory, A. DeMasi, K.F. Ludwig, Boston University, C. Eddy, U.S. Naval Research Laboratory
11:00am TF+AS+NS+SA-ThM10
Nucleation and Growth of Few-Layer ALD Films on Various Substrates Studied by Low Energy Ion Scattering (LEIS)
Malcolm Hathaway, Harvard University, T. Grehl, P. Bruener, ION-TOF GmbH, Germany, M. Fartmann, Tascon GmbH, Germany, H. Brongersma, ION-TOF GmbH, Germany
11:20am TF+AS+NS+SA-ThM11
Ni1-xPtxSi Film Characterization for sub-32 nm CMOS Fabrication
Suraj Patil, R. Rai, S. Beasor, L. Zhou, GLOBALFOUNDRIES, NY, USA
11:40am TF+AS+NS+SA-ThM12
Growth of β-Tungsten Films Towards a Giant Spin Hall Effect Logic Device
Avyaya Narasimham, University at Albany-SUNY, R.J. Matyi, State University of New York, A. Green, University at Albany-SUNY, A.C. Diebold, V. LaBella, State University of New York
12:00pm TF+AS+NS+SA-ThM13
Aluminum Nitride Grown by Atomic Layer Epitaxy Characterized with Real-Time Grazing Incidence Small Angle X-ray Scattering
Virginia Anderson, N. Nepal, S.D. Johnson, US Naval Research Laboratory, A. DeMasi, Boston University, J.K. Hite, US Naval Research Laboratory, K.F. Ludwig, Boston University, C.R. Eddy, Jr, US Naval Research Laboratory