AVS 62nd International Symposium & Exhibition
    Electronic Materials and Processing Monday Sessions

Session EM+AS+SS-MoA
MIM Diodes, Functional Oxides, and TFTs

Monday, October 19, 2015, 2:20 pm, Room 211A
Moderators: Pat Brady, RedWave Energy, Inc., John Conley, Oregon State University


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm EM+AS+SS-MoA1
Engineered Tunnel-Barrier Terahertz Rectifiers for Optical Nantennas
Ivona Mitrovic, N. Sedghi, A.D. Weerakkody, J.F. Ralph, S. Hall, J.S. Wrench, P.R. Chalker, University of Liverpool, UK, Z. Luo, S. Beeby, University of Southampton, UK
2:40pm EM+AS+SS-MoA2
MIM Diodes for RF Energy Harvesting
A.A. Khan, A. Syed, F. Ghaffar, Atif Shamim, King Abdullah University of Science and Technology
3:00pm EM+AS+SS-MoA3
Diode Structure Based on Carbon Materials for Ultra high Frequency Driving
JaeEun Jang, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Republic of Korea
3:20pm EM+AS+SS-MoA4
Optical Rectenna Arrays using Vertically Aligned Carbon Nanotubes
Baratunde Cola, Georgia Institute of Technology
3:40pm EM+AS+SS-MoA5 Invited Paper
World Record Tunable Microwave Dielectrics
C.H. Lee, Cornell University, N.D. Orloff, National Institute of Standards and Technology (NIST), T. Birol, Y. Zhu, Y. Nie, Cornell University, V. Goian, Institute of Physics ASCR, R. Haislmaier, Pennsylvania State University, J.A. Mundy, Cornell University, J. Junquera, Universidad de Cantabria, P. Ghosez, Université de Liège, R. Uecker, Leibniz Institute for Crystal Growth, V. Gopalan, Pennsylvania State University, S. Kamba, Institute of Physics ASCR, L.F. Kourkoutis, K.M. Shen, D.A. Muller, Cornell University, I. Takeuchi, University of Maryland, College Park, J.C. Booth, National Institute of Standards and Technology (NIST), C.J. Fennie, Darrell Schlom, Cornell University
4:20pm EM+AS+SS-MoA7 Invited Paper
Bandgap Engineering and Application of SiZnSnO Amorphous Oxide Semiconductor
Sang-Yeol Lee, Cheongju University, Republic of Korea
5:00pm EM+AS+SS-MoA9
Self-aligned Vertical ZnO-based Circuits by Spatial ALD
Shelby Nelson, C.R. Ellinger, L.W. Tutt, Eastman Kodak Company
5:20pm EM+AS+SS-MoA10
Geometrically Asymmetric Tunneling Nanostructures by Atomic Layer Deposition
Jie Qi, X. Jiang, B.G. Willis, University of Connecticut