| AVS 62nd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Saliha Ilican, Anadolu University, Turkey |
| Authors: | S. Ilican, Anadolu University, Turkey Y. Caglar, Anadolu University, Turkey S.A. Aksoy, Anadolu University, Turkey M. Caglar, Anadolu University, Turkey |
| Correspondent: | Click to Email |
ZnO is one of the widely studied materials for its number of exciting properties. It is a wide band gap semiconductor material with Eg ~ 3.3 Ev. Electrodeposition is well known for depositing metals and metallic alloys at the industrial level, with a wide range of applications from large area surface treatments to most advanced electronic industries. Electrodeposition of semiconducting materials thus represents a new challenge, not only from the academic point of view, but also from the economic point of view, since this method presents interesting characteristics for large area, low cost and generally low temperature and soft processing of materials. ZnO nanorod array films were grown by electrochemical deposition onto p-Si substrates from an aqueous route. Aqueous solution of Zn(NO3)2.6H2O and hexamethylenetetramine (HMT) was prepared using triple distilled water. The bath temperature is maintained at 90 oC during the electrodeposition of the ZnO films. The effect of deposition time on the crystallinity and nanorod arrays were investigated. The crystalline structure and orientation of the ZnO films were investigated using XRD method. The lattice parameters and texture coefficient values of the films were determined. Microstructure was analyzed by a field emission scanning electron microscope (FESEM), and the effects of the deposition time in the microstructure of the films were investigated. The film was determined the most appropriate structural properties and the p-n heterojunction diode was fabricated by using this film. The diode parameters were determined from the analysis of the measured dark I-V curves. Rectifying behavior was observed from I-V characteristics of these heterojunction diodes.
Acknowledgement: This work was supported by Anadolu University Commission of Scientific Research Project under Grant No. 1207F118