| AVS 62nd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Chao-Te Lee, National Applied Research Laboratories, Taiwan, Republic of China |
| Authors: | C.-T. Lee, National Applied Research Laboratories, Taiwan, Republic of China D. Chiang, National Applied Research Laboratories, Taiwan, Republic of China P.-K. Chiu, National Applied Research Laboratories, Taiwan, Republic of China H.P. Chen, National Applied Research Laboratories, Taiwan, Republic of China C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China H.-B. Zhang, Minghsin University of Science and Technology, Taiwan, Republic of China C.-C. Jaing, Minghsin University of Science and Technology, Taiwan, Republic of China |
| Correspondent: | Click to Email |
The periodic Mo/Si biilayers with Ru capping layer were deposited on Si (100) substrate by RF magnetron sputtering with Mo, Si, and Ru targets. The multilayers were designed for reflectivity at the wavelength of 13.5 nm. The effects of Ru capping layer on the microstructure, surface roughness and reflectance of multilayers were investigated by atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and a spectrometer. The surface roughness of Ru thin film was decreased from 0.35 nm to 0.15 nm when the RF power was increased from 50 W to 200 W. The AFM measurements showed the uniform morphology with a very low surface roughness value under 0.15 nm with 50V dc-bias assisting. It was found that the Mo-on-Si, Si-on-Mo, and Ru/Si interface layers were discriminated by HRTEM, and XPS. The Mo-on-Si interface layer was 0.45 nm. However, the Si-on-Mo interface layer was increased with thickness increased from 0.9 nm to 1.35 nm. The cause of Mo/Si and Ru/Si interfaces form was attributed to the substrate temperature was increased during sputtering. In this work, the reflectivity of the multilayers was 60 ~ 65 % which was attributed to form the Mo/Si and Si/Ru interfaces.