| AVS 62nd International Symposium & Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+SS-WeM |
| Session: | ALD Surface Reactions and Precursors |
| Presenter: | Amy Walker, University of Texas at Dallas |
| Authors: | Z. Shi, University of Texas at Dallas A.V. Walker, University of Texas at Dallas |
| Correspondent: | Click to Email |
We discuss our recent studies of atomic layer like deposition (ALLD) of ZnS and ZnO on organic thin films using diethyl zinc (DEZ) as the zinc source. This work has important applications in photovoltaics, molecular and organic electronics, sensing, photonics and other technologies. We show that a detailed understanding of the reaction pathways is critical for controlling the properties of ZnO and ZnS films grown by ALD. For both ZnO and ZnS ALLD, the growth rates on –COOH terminated SAMs are approximately 10 % lower than on –OH terminated SAMs. As expected on −OH terminated SAMs, the DEZ reacts with the hydroxyl group. However, on –COOH terminated SAMs DEZ reacts with both the carbonyl and hydroxyl bonds present leading to the formation of a ketone rather than deposition. Further, the composition of the deposited layer and its growth can be affected by the functionality of the surface. For ZnO ALLD, on-COOH terminated SAMs XPS indicates that the initial composition of the layer is similar to Zn(OH)2. In contrast on –OH terminated SAMs the deposited layer is always composed on ZnO. The growth of the layer also appears to be different. On –COOH terminated SAMs, the layer growth is more two dimensional (layer-by-layer) while on –OH terminated SAMs, the growth appears to proceed via the formation of islands.