| AVS 62nd International Symposium & Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+SS-WeM |
| Session: | ALD Surface Reactions and Precursors |
| Presenter: | Pierre Mani, Universidad Autónoma de Ciudad Juárez-IIT, Mexico |
| Authors: | P.G. Mani, Universidad Autónoma de Ciudad Juárez-IIT, Mexico E. Lopez, Universidad Autónoma de San Luis Potosí, Mexico H. Leos, Universidad Autónoma de Ciudad Juárez-IIT, Mexico H. Hernandez, Universidad Autónoma de San Luis Potosí, Mexico J.A. Hernandez, Universidad Autónoma de Ciudad Juárez-IIT, Mexico J.R. Farias, Universidad Autónoma de Ciudad Juárez-IIT, Mexico J.T. Elizalde, Universidad Autónoma de Ciudad Juárez-IIT, Mexico M.A. Melendez, CINVESTAV, Mexico M.A. Vidal, Universidad Autónoma de San Luis Potosí, Mexico |
| Correspondent: | Click to Email |
A systematic analysis was performed to determine the characteristic times of surface coverage of oxidant-agent on silicon substrates (100) by the atomic layer deposition (ALD) method in order to ensure the saturation of the surface substrate for growth. The aperture-times of the precursors have been studied due to stoichiometric impact of the layers and also at the interface. The numbers of cycles were critical for the interface formation at the early stage growth. This work emphasizes in the study and analysis between interface of high k dielectric layer and amount of cycles as function of layers and stoichiometric interface. Previous works complement with results obtained in study the growth of hafnium oxide and titanium oxide by atomic layer deposition (ALD) demonstrating the close relationship between the thickness and composition of the interface layer with the number of cycles performed by the ALD and with the aperture-time of the precursors. This analysis shows a base that will allow create HfO2 ZrO2, TiO2, Ta2O5, La2O3 nanofilms with optimal characteristics.