AVS 62nd International Symposium & Exhibition | |
Thin Film | Thursday Sessions |
Session TF+AS+NS+SA-ThA |
Session: | Thin Film: Growth and Characterization, Optical and Synchrotron Characterization II |
Presenter: | Chao Li, University of California at Los Angeles |
Authors: | C. Li, University of California at Los Angeles M. Goorsky, University of California at Los Angeles |
Correspondent: | Click to Email |
The porosity and pore size distribution of coatings prepared by atomic layer deposition and by other deposition techniques is important to understand their optical and mechanical properties. Specular X-ray reflectivity (SXRR) is capable of extracting layer thickness with angstrom resolution as well as determining the layer density. This makes it a good candidate for the porosity characterization of the antireflection coatings. On the other hand, advances in the development of X-ray generators and optics have made in-house glancing incidence small angle X-ray scattering (GISAXS) experimentation suitable for thedetermination of the size and shape of pores (in the scale of sub-nanometer to 100 nm) existing in thin films. It can be realized through the simulation of pore scattering based on distorted wave Born approximation (DWBA). Unfortunately, previous GISAXS studies failed to exclude the scattering from the rough surface and interfaces of thin films from the total scattering that was used for the simulation. In this study, we propose a refined GISAXS method characterizing the pore size distribution with the scattering from the rough surface and interfaces excluded. The scattering from the surface and interfaces was determined by the simulation of X-ray reflectivity (XRR) longitudinal scan with the parameters of the surface roughness σ, the lateral correlation length ξ and the Hurst parameter h extracted from the atomic force microscopy measurement, and layer thicknesses, densities and compositional grading determined by the specular XRR simulation. This refined GISAXS method, together the SXRR technique, was applied to utilized to reveal the effect of deposition techniques on the nanostructures of single-layer Al2O3 -based antireflection coatings. They were deposited using atomic layer deposition ( ALD ) which is a good candidate for multilayer antireflection coatings, due to the self-limiting nature of chemical reactions resulting in the precise control of film thickness and large-area uniformity. Each of them has two amorphous structures on a Si substrate grown with different deposition parameters. It is indicated by the refined GISAXS method that the first Al2O3 single layer is porous with a mean pore (spherical shape) radius of 7.2 nm while there are no pores in the second Al2O3 single layer. This agrees well with the SXRR showing a lower density of the first Al2O3 single layer (2.93 g/cm3) than that of the second Al2O3 single layer (3.04 g/cm3).