AVS 62nd International Symposium & Exhibition | |
Surface Science | Monday Sessions |
Session SS+AS+EN-MoM |
Session: | Synthesis, Structure and Characterization of Oxides |
Presenter: | Xiaodong Zhu, Yale University |
Authors: | X. Zhu, Yale University M.D. Morales-Acosta, Yale University J. Shen, Yale University F.J. Walker, Yale University J. Cha, Yale University E.I. Altman, Yale University |
Correspondent: | Click to Email |
The growth of non-polar Cr2O3 on oppositely poled ZnO surfaces was characterized to determine how the polar substrate influences the properties of the non-polar film. Photoelectron spectroscopy (XPS and UPS), electron diffraction (RHEED and LEED), High-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR) have been performed to determine the growth mode, film quality and interfacial electronic properties are influenced by the substrate polarization. The growth is 2D; however, the films appear initially disordered on both substrates. With increasing film thickness, the films ordered with a well-defined epitaxial relationship. The HRTEM and XRD/XRR results for thicker films confirm a clear interface and well-defined lattice structure near the interface and throughout the film, indicating that above a critical thickness the entire film reorganizes into an ordered structure. The polar interfaces show a small but noticeable band offset that decayed with increasing film thickness. Statistical analysis of UPS valence band spectra revealed an enhanced density of states near the Fermi level for Cr2O3 on the positive surface consistent with stabilization of the positive interface by charge transfer; in contrast, no significant valence band differences were observed between bulk Cr2O3 and thin Cr2O3 thin layers on the negative surface. The results will be compared with those obtained for ZnO/Cr2O3/ ZnO (0001) and (000-1) to determine if the interfacial properties are sensitive to how the interface is formed.