| AVS 62nd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | Salvador Gallardo-Hernandez, Cinvestav-IPN, Mexico |
| Authors: | A. Hernandez-Hernandez, Universidad Autonoma del Estado de Hidalgo, Mexico A. Garcia-Sotelo, Cinvestav-IPN, Mexico E. Campos, Cinvestav-IPN, Mexico S. Gallardo-Hernandez, Cinvestav-IPN, Mexico J.L. Enriquez-Carrejo, Universidad Autónoma de Ciudad Juárez-IIT, Mexico P.G. Mani-Gonzalez, Universidad Autónoma de Ciudad Juárez-IIT, Mexico J.R. Farias-Mancilla, Universidad Autónoma de Ciudad Juárez-IIT, Mexico M. Melendez-Lira, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico |
| Correspondent: | Click to Email |
The characteristics of germanium, mainly its compatibility with silicon technology, and the sensitivity of its band structure to confinement confer a high attractive to the synthesis of germanium nanostructures. The samples were prepared on p-type Si (1 1 1) substrates by reactive sputtering. Structural characterization was carried out by grazing angle X-ray diffraction. Surface roughness was quantified by atomic force microscopy and correlated with micro Raman spectroscopy imaging. X-ray diffraction showed the amorphous characteristics of the heterostructures. Micro-Raman mapping allow to obtain the Ge nanocrystals distribution. XPS indicates that there is a transition layer with a gradual composition around Ge nanocrystals. SIMS results are well correlated with the Ge depth distribution observed by micro-Raman imaging. IvsV and spectral response results are correlated with the size and spatial distribution of Ge nanocrystals.
*: Partially funded by CONACyT-Mexico