| AVS 62nd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS+SP-TuM |
| Session: | Nanoscale Imaging and Materials Characterization |
| Presenter: | Lunet E. Luna, University of California at Berkeley |
| Authors: | L.E. Luna, University of California at Berkeley R. Maboudian, University of California at Berkeley C. Carraro, University of California at Berkeley |
| Correspondent: | Click to Email |
Silicon carbide (SiC) based electronics hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC nanowires have attracted interest in applications such as biological sensors, field emission cathodes, and energy storage devices. To realize SiC nanowire based devices for large-scale use, the growth mechanism must be further understood to enable strict control of nanowire crystal structure and orientation. Here we report on recent studies to understand the growth mechanism of Ni-assisted silicon carbide nanowires using single-source precursor methyltrichlorosilane. The effects of growth parameters, such as temperature and precursor flow rate, on the structure and morphology of the resulting nanowires will be presented. This study identifies the key parameters that may be varied to tailor nanowire growth for various applications.