| AVS 62nd International Symposium & Exhibition | |
| Helium Ion Microscopy Focus Topic | Thursday Sessions |
| Session HI+AS+NS-ThA |
| Session: | Imaging and Milling with He and Ne Ion Beams |
| Presenter: | Zhang-Jie Wang, Xi'an Jiaotong University, China |
| Authors: | Z.J. Wang, Xi'an Jiaotong University, China F.I. Allen, University of California, Berkeley Z.W. Shan, Xi'an Jiaotong University, China P. Hosemann, University of California, Berkeley |
| Correspondent: | Click to Email |
Ion implantation has been used for decades to investigate the response of materials to radiation damage. Understanding the effect of He in materials is a key aspect in the optimization of fusion, fast reactor and spallation sources suffering from high He/dpa (displacements per atom) ratios. The traditional large-area He implantation techniques are rather materials-constrained and time consuming, thus limiting systematic studies. The work presented here utilizes the Zeiss ORION NanoFab instrument which deploys He and Ne ion beams in combination with a Ga ion source to quickly and efficiently manufacture nanostructures and then perform direct He implantation in selected areas of interest. Demonstrated in single crystal and copper nanotwinned structures, the systematical study of He bubble lattice distribution and twin structure evolution under different implanting doses and dose rates is achieved in a fast and efficient manner. We also utilize the combined Ga-He beam system to increase sample throughput to manufacture nanopillars and implant with He in the same chamber. Each pillar was subsequently tested using a JEOL 3010 TEM equipped with a Hysitron PI95 nanomechanical testing system. The results show that the resistance of deformation twinning in single crystal Cu and twin boundary migration in nanotwinned Cu are both significantly improved for increasing He doses up to 1x1018He+/cm2. The novel technique presented here makes it feasible and efficient to evaluate He ion damage and its effect on small volume materials.