| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuM |
| Session: | Beyond CMOS: Materials and Devices for a Post CMOS Era |
| Presenter: | Seongjun Park, Samsung Advanced Institute of Technology, Republic of Korea |
| Authors: | S. Park, Samsung Advanced Institute of Technology, Republic of Korea J. Lee, Samsung Advanced Institute of Technology, Republic of Korea J. Heo, Samsung Advanced Institute of Technology, Republic of Korea K. Lee, Samsung Advanced Institute of Technology, Republic of Korea E. Lee, Samsung Advanced Institute of Technology, Republic of Korea S. Lee, Samsung Advanced Institute of Technology, Republic of Korea S. Jung, Samsung Advanced Institute of Technology, Republic of Korea |
| Correspondent: | Click to Email |
Two dimensional (2D) materials including Graphene and Transition Metal Dichalcogenide (TMD) have been considered as potential materials for post Si technology. They are atomically thin and have exceptional electronic and optoelectronic properties, such as high electron mobility and high reponsivity. In addition, they have unique mechanical properties as inorganic semiconductors, such as flexibility and even some stretchabilities due to their atomic thin nature.
TMS's have band gaps and TMD based device can have high on/off ratio. Thus, they have been considered as channel materials for atomically thin nano devices. There are various TMD materials with various band gaps and this is somewhat advantages for TMD's since they can be considered many different applications depending on their band gaps.
Unlike TMD, graphene has no band gap and it is difficult to achieve high on/off ratio. We propsed and demonstrated a new device structure, Barristor, based on one of the unique properties of graphene, work function tunability. The key feature of the device is the modulation of Schottky barrier height between graphene and semiconductor through the gate voltage modulation. This new device shows high on/off ratio of 1,000,000 or higher can be achieved. In addition, Barristor is fully compatible with curent Si technology and we were able to fabricate the devices with 6" wafer scale with CVD (Chemical Vapor Deposition) grown graphene.
In this presentation, we will cover some of our recent developments of TMD based devices. We investigated various TMD's and we will present the summary of their performances. Also we will discuss about the details od Barristor including vertical tunneling devices. In addition, we will dIscuss the issues on wafer scale developments and some of the process related issues of TMD devices and Graphene Barristor and their potential applications.