| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Thursday Sessions |
| Session 2D-ThP |
| Session: | 2D Materials Focus Topic Poster Session |
| Presenter: | Ludwig Bartels, UC Riverside |
| Authors: | B. Davis, UC Riverside E. Preciado, UC Riverside V. Klee, UC Riverside A. Nguyen, UC Riverside I. Lu, UC Riverside D. Barroso, UC Riverside S. Naghibi, UC Riverside I. Liao, UC Riverside G. von Son, UC Riverside D. Martinez-Ta, UC Riverside L. Bartels, UC Riverside |
| Correspondent: | Click to Email |
We demonstrate the growth of transition metal dichalcogenides (TMD) single-layer films through chemical vapor deposition (CVD) onto pre-fabricated patterns on SiO2/Si surfaces. For an ultimate technological application of single-layer TMD films, they need to be integrated into lithographic structures on SiO2/Si substrates; exfoliation and/or transfer are not suitable or scalable techniques. The comparatively low growth temperatures of TMD films (about 700°C) compared to graphene (about 1000°C) is a crucial advantage of the former, as SiO2/Si features can sustain the growth temperature. Here we offer examples of how pre-fabricated patterns can control the growth of TMD films, and how the latter arrange themselves into former to offer features (e.g., natively suspended material) that is typically not available directly from growth onto conventional flat substrates. We explore the electrical and optical properties of single-layer growth on substrates with holes, pillars, and trenches.