AVS 62nd International Symposium & Exhibition | |
2D Materials Focus Topic | Tuesday Sessions |
Session 2D+EM+NS+SS+TF-TuM |
Session: | Optical and Optoelectronic Properties of 2D Materials |
Presenter: | Sebastian Funke, Accurion GmbH, Germany |
Authors: | S. Funke, Accurion GmbH, Germany P.H. Thiesen, Accurion GmbH, Germany G. Greg Hearn, Accurion Inc. |
Correspondent: | Click to Email |
With the rising of 2D materials in surface sciences, the localization of mono- to few-layers of 2D materials, such as graphene, Molybdenum disulfide, hexagonal boron nitride is a time consumptive task. With the help of imaging spectroscopic ellipsometry flakes of 2D materials can be found and its layer numbers can be differentiated.
Therefore a spectroscopical mapping of the sample is done. At selected wavelengths nulling ellipsometry for each pixel in the field of view is done to measure Δ/Ψ. The measurement of all pixels is done simultaneously. To cover larger areas than the field of view a XY-patterning is done automatically. For each XY-position spectroscopic Δ/Ψ maps are obtained. Every pixel of a Δ/Ψ map represents the spectroscopic angle Δ/Ψ respectively. By comparing the spectral Δ/Ψ values for each pixel with the ellipsometric model of e.g. graphene monolayer, flakes of graphene monolayers on the sample can be found. To ensure, that only flakes are found, a grid with a threshold is used. The threshold indicates the number of pixels in the grid that need to fit to the model.
In the talk we present the capability of imaging ellipsometry to localize and identify monolayer to few-layers of 2D Materials. Flakes of MoS2 with a size smaller than 10 µm can be localized. Monolayer of graphene can be distinguished from bilayers of graphene. To improve the time factor, the use of a Scheimpflug corrected objective is presented. Further investigations on different 2D materials, e.g. h-BN and the implementation of a Raman System is in progress.