AVS 62nd International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D+EM+NS+SS+TF-TuM

Invited Paper 2D+EM+NS+SS+TF-TuM3
2D Materials and Heterostructures for Applications in Optoelectronics

Tuesday, October 20, 2015, 8:40 am, Room 212C

Session: Optical and Optoelectronic Properties of 2D Materials
Presenter: Thomas Mueller, Vienna University of Technology, Austria
Correspondent: Click to Email
Two-dimensional (2D) atomic crystals are currently receiving a lot of attention for applications in (opto-)electronics. In this talk I will review our research activities on photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, I will present monolayer p-n junctions, formed by electrostatic doping using a pair of split gate electrodes, and MoS2/WSe2 van der Waals type-II heterojunctions. Upon optical illumination, conversion of light into electrical energy occurs in both types of devices. I will present measurements of the electrical characteristics, the photovoltaic properties, and the gate voltage dependence of the photoresponse. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. We envision that the efficient photon conversion, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.