| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Thursday Sessions |
| Session 2D+EM+MG+NS+SE+SM+SS+TF-ThM |
| Session: | Emergent 2D Materials |
| Presenter: | David Barroso, University of California, Riverside |
| Authors: | D. Barroso, University of California, Riverside T. Empante, University of California, Riverside A. Nguyen, University of California, Riverside V. Klee, University of California, Riverside I. Lu, University of California, Riverside E. Preciado, University of California, Riverside C. Lee, University of California, Riverside C. Huang, University of California, Riverside W. Coley, University of California, Riverside S. Naghibi, University of California, Riverside G. von Son, University of California, Riverside A. Brooks, University of California, Riverside J. Kim, University of California, Riverside L. Bartels, University of California, Riverside |
| Correspondent: | Click to Email |
Transition Metal Dichalcogenides (TMDs) have been of increasing interest over the past years due to their exciting semiconducting properties. In the bulk, TMDs possess a native indirect bandgap and transition to a direct bandgap as they approach the monolayer limit. The bandgaps range from 1.15 eV to 1.95 eV depending on composition. Using organic liquids and/or inorganic powders as precursors, CVD growth techniques have been realized for MX2 TMDs (M = Mo, W; X = S, Se, Te) and their alloys at tunable compositions. We achieved consistent synthesis of these TMDs materials. The films can either be made homogeneous in bandgap or exhibiting a linear bandgap gradient. Characterization of the films include Raman and photoluminescence spectroscopy, as well as AFM. Device fabrication allows for transport measurements. Depending on the composition, the materials show n- or p-doping in a consistent fashion.