Paper 2D+EM+MC+MI+NS+SP+SS+TF-TuA4
Large-Area Low-Pressure Synthesis of Single-Layer MoS₂ Films and Schottky-Barrier Formation upon Metal Deposition

Tuesday, October 20, 2015, 3:20 pm, Room 212C

Using a high vacuum CVD process we are able to synthesize large are monolayer MoS₂ films. Organic chalcogen precursors are released into the growth chamber and react with a Mo filament creating films up to 2cm­² in size that are uniform and free of oxides. The films have pronounced photoluminescence intensity and are in Raman spectroscopy indistinguishable from exfoliated material. Metal contact formation to these films was investigated under UHV conditions utilizing X-Ray Photoelectron Spectroscopy . These measurements permit us to follow the formation of a Schottky Barrier with increasing metal film thickness on the Angstrom scale. We utilize core level spectroscopy to indicate the evolution of the MoS₂ valence band under metal deposition.