| AVS 61st International Symposium & Exhibition | |
| Selective Deposition as an Enabler of Self-Alignment Focus Topic | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | SD-WeM1 Invited Paper Utilizing Inhibitor Molecules in Low Temperature CVD to Control Thin Film Nucleation, Surface Morphology and Conformality in Deep Features John R. Abelson, University of Illinois at Urbana-Champaign |
| 8:40am | SD-WeM3 Invited Paper Metrology of Selective Functionalization of Semiconductor, Oxide and Nitride Surfaces L. Liu, W.J.I. DeBenedetti, S. Karakaya, T. Peixoto, University of Texas at Dallas, R. Hourani, D.J. Michalak, Intel Corporation, Yves Chabal, University of Texas at Dallas |
| 9:20am | SD-WeM5 First Principles Calculations of Substrate-Specific Reactions in ALD Simon Elliott, M. Shirazi, S. Klejna, Tyndall National Institute, Ireland |
| 9:40am | SD-WeM6 Surface Chemistry during ALD of SiNx from BTBAS and N2 Plasma C.K. Ande, K. de Peuter, Eindhoven University of Technology, Netherlands, H.C.M. Knoops, Eindhoven University of Technology, S.D. Elliott, Tyndall National Institute, Ireland, Erwin Kessels, Eindhoven University of Technology, Netherlands |
| 11:00am | SD-WeM10 Enhanced Area-Selective Atomic Layer Deposition of TiN on HfO2 Sonali Chopra, A.P. Lane, C.G. Willson, J.G. Ekerdt, The University of Texas at Austin |
| 11:20am | SD-WeM11 Selective Area Deposition of Short Cycle-Time ALD for Patterned-by-Printing Electronics CarolynR. Ellinger, S.F. Nelson, Eastman Kodak Company |
| 11:40am | SD-WeM12 Self-limiting CVD of a Silicon Monolayer for Preparation of Subsequent Silicon or Gate Oxide ALD on InGaAs(001)-(2x4) Mary Edmonds, T. Kent, University of California, San Diego, R. Droopad, Texas State University, E.A. Chagarov, A.C. Kummel, University of California, San Diego |