AVS 61st International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF+AS+EM-TuA

Paper TF+AS+EM-TuA9
Superconducting Properties of NbN and NbTiN Thin Films

Tuesday, November 11, 2014, 5:00 pm, Room 305

Session: Thin Film: Growth and Characterization II
Presenter: Matthew Burton, College of William and Mary
Authors: M. Burton, College of William and Mary
M.R. Beebe, College of William and Mary
R.A. Lukaszew, College of William and Mary
D. Beringer, College of William and Mary
Correspondent: Click to Email

Thin films of NbN and NbTiN are promising materials currently researched for improvements in superconducting radio frequency (SRF) technology and applications. At present, bulk niobium SRF accelerating cavities suffer from a fundamental upper limit in maximally sustained accelerating gradients; however, a scheme involving multi-layered superstructures consisting of superconducting-insulating-superconducting (SIS) layers has been proposed to overcome this fundamental material limit of 50 MV/m [1]. The SIS multi-layer paradigm is reliant upon implementing a thin shielding material with a suitably high Hc1 which may prevent early field penetration in a bulk material layer and consequently delay the high field breakdown. It has been predicted that for thin superconducting films — thickness less than the London penetration depth (~200 nm in the case of NbN) — the lower critical field Hc1 will be enhanced with decreasing thickness. Thus, NbN thin films with a high Hc1 value are possible candidates for such SIS structures. We note though that since the intrinsic resistivity of NbN is rather large, efforts are also devoted to NbTiN which has similar superconducting properties but much lower intrinsic resistivity which is preferable for this application. Here we present our study on the structure and superconducting properties of a series of NbN and NbTIN thin films and correlate the effects of film microstructure and surface morphology on relevant superconducting properties such as the critical temperature, Tc, the lower critical field, Hc1, and the residual resistance ratio.

[1] A. Gurevich, Appl. Phys. Lett., 88, 012511 (2006).