| AVS 61st International Symposium & Exhibition | |
| Surface Science | Thursday Sessions |
| Session SS+AS+NS-ThA |
| Session: | Semiconductor Surfaces and Interfaces 1 |
| Presenter: | Edmund Seebauer, University of Illinois at Urbana-Champaign |
| Authors: | M. Li, University of Illinois at Urbana-Champaign P. Gorai, University of Illinois at Urbana-Champaign E.G. Seebauer, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
Point defects within metal oxide semiconductors such as ZnO affect the material’s performance in applications for nanoelectronics, gas sensing, photonics and photocatalysis. Past work in this laboratory has shown that the presence of a nearby surface can influence the concentrations and spatial distributions of defects deep within the semiconductor – often in a controllable way. One mechanism for this influence involves band bending near the surface. The present work employs the optical modulation technique of photoreflectance to measure the magnitude VS of band bending at polar c-axis ZnO surfaces, and demonstrates that VS can be manipulated over a significant range (roughly 0.23-0.44 eV) through variations of both temperature and the ambient partial pressure of O2. Separate modeling of charged oxygen interstitial motion within the ZnO indicates that the near-surface concentration of these defects scales quadratically with VS, thereby pointing to a novel general approach by which bulk point defect concentrations can be controlled.