| AVS 61st International Symposium & Exhibition | |
| Energy Frontiers Focus Topic | Tuesday Sessions |
| Session EN-TuP |
| Session: | Energy Frontiers Poster Session |
| Presenter: | Romain Meunier, Université de Nantes, France |
| Authors: | R. Meunier, Université de Nantes, France M.-P. Besland, Université de Nantes, France P.Y. Jouan, Université de Nantes, France A. Lafond, Université de Nantes, France P.Y. Thoulon, Crosslux Company, France M. Ricci, Crosslux Company, France |
| Correspondent: | Click to Email |
In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling and limits selenium use with respect to toxicity issues. In 1992, Hernandez et al1 early published on CIGSe layers deposited by sputtering of a single quaternary CIGSe target.
The improvement of plasma discharges at lower working pressures in the last years had allowed news possibilities for CIGS thin films deposited by sputtering. In 2010, Frantz et al2 succeeded to obtain a CIGSe solar cell with an efficiency of 8.9%.
At IMN laboratory, a dedicated chamber has been home-designed for CIGSe thin films deposition using one step sputtering. CIGSe thin films were deposited on SLG/Mo substrates by radio-frequency magnetron sputtering at ambient temperature. The deposition parameters like pressure or power density have been investigated. Then, CIGS thin films have been annealed at various temperatures in a furnace under Ar flow. The evolution of chemical composition and structural properties of CIGS thin films as-deposited and annealed will be presented.
References
1. Hernández Rojas, J. L. et al.. Appl. Phys. Lett. 60, 1875–1877 (1992)
2. Frantz, J. A. et al. Thin Solid Films 519, 7763–7765 (2010).