| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeA |
| Session: | High-K Dielectrics for 2D Semiconductor |
| Presenter: | Ruoyu Yue, University of Texas at Dallas |
| Authors: | R. Yue, University of Texas at Dallas A. Barton, University of Texas at Dallas X. Peng, University of Texas at Dallas N. Lu, University of Texas at Dallas R. Addou, University of Texas at Dallas S. McDonnell, University of Texas at Dallas L. Chen, University of Texas at Dallas J.Y. Kim, University of Texas at Dallas L. Colombo, Texas Instruments M. Kim, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas C.L. Hinkle, University of Texas at Dallas |
| Correspondent: | Click to Email |
The growth of high-quality, layered HfSe2 thin films by molecular beam epitaxy (MBE) on a variety of substrates is demonstrated for the first time. The cross-section of HfSe2 thin films on highly ordered pyrolytic graphite (HOPG) shows the layered structure of crystalline HfSe2 with an atomically sharp interface between the HfSe2 and HOPG, verifying the van der Waals epitaxy. Crystalline HfSe2 thin films with preferred orientation and hexagonal top surface symmetry are characterized by RHEED, STM, and XRD with a measured lattice constant consistent with the theoretical prediction of the 1-T phase. The stoichiometry (Hf: Se) of crystalline HfSe2 on HOPG, measured by XPS, is very close to 1:2 and the in-plane and out-of-plane vibration mode peaks of the 1-T structure of HfSe2 is confirmed by Raman spectroscopy. It is also noted that the crystal quality of the HfSe2 changes as a function of substrate with the best growth results obtained on inert, hexagonal symmetry surfaces. These results indicate that the growth of novel TMDs by MBE is achievable and opens the possibility for exciting new 2D heterostructures and devices.