Paper EM-TuP3
Electric Measurements of RF SOI MOSFET using CMOS Technology

Tuesday, November 11, 2014, 6:30 pm, Room Hall D

The aims of this work is the development of a 2μm SOI CMOS process. The manufacturing of the devices was carried out using processes based on SOI CMOS technology. The characteristics of the fabricated devices in a SOI Silicon are compared in order to obtain its parameters, as well as with the results published in the literature. Besides is to present the electric measurements of n and p channel RF MOSFET fabricated on Silicon substrates of type SOI – Silicon On Insulator. The different structures of the devices had been fabricated and their physical and electrical characterizations performed. In addition, there will be a sequence of the process steps involved in building the CMOS chips. The devices are part of an academic chip, which will be used in disciplines of engineering courses and in research activities of the Microelectronics area.