AVS 61st International Symposium & Exhibition
    Electronic Materials and Processing Monday Sessions
       Session EM+MI+NS-MoM

Paper EM+MI+NS-MoM4
Strain-Controlled Stochiometry Variations in CaMnO3 Epitaxial Thin Films

Monday, November 10, 2014, 9:20 am, Room 314

Session: Complex Oxides and Their Interfaces
Presenter: Rajeswari Kolagani, Towson University
Authors: R. Kolagani, Towson University
G. Yong, Towson University
Z. Warecki, Towson University
C. Stumpf, Towson University
D. Schaefer, Towson University
P. Sharma, Towson University
C. Hart, Towson University
A. Burger, Towson University
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CaMnO3 is a material of interest for application in novel energy technologies such as thermoelectric power generation, and as a photo catalyst for hydrogen energy storage. We are currently investigating the properties of epitaxial thin films of CaMnO3 (CMO) and its electron doped derivatives towards tuning material properties that enable these applications. Oxygen stoichiometry and its effect on structural and electronic properties are key variables in optimizing thin films of these materials. We will present our studies of CMO thin films grown epitaxially by Pulsed Laser Deposition on several compatible oxide substrates with varying degrees of tensile and compressive lattice mismatch. Lattice mismatch results in the distortion of the unit cell symmetry from cubic to tetragonal. In hole-doped rare earth manganites such as La 0.7CaMnO3, tensile as well as compressive lattice mismatch strain is known to cause a suppression of the insulator-metal transition, leading to an increase in electrical resistivity. In contrast, our studies of the structural and electrical properties of CMO thin films indicate that tensile strain causes a pronounced decrease in the electrical resistivity. The strained films have an expanded out of plane lattice parameter which is consistent with reduced oxygen stoichiometry. These results indicate that the tensile strain causes CMO thin films to be more susceptible to the formation of oxygen vacancies, thus reducing electrical resistivity. This is in agreement with recent theoretical predictions correlating strain and oxygen vacancies, where tensile strain induced in-plane expansion of the unit cell is shown to favor oxygen deficiency. The potential for employing lattice mismatch strain for tuning film composition has important implications for technological applications. We will present our detailed investigations of the correlation of strain and oxygen stoichiometry in CaMnO3-d andrelated manganite compositions, employing high resolution X-ray diffraction, temperature dependent resistivity measurements, and characterization of the film surface morphology using atomic force microscopy.