| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM+2D-TuA |
| Session: | High-k Dielectrics for Advance Semiconductor |
| Presenter: | Stephen McDonnell, University of Texas at Dallas |
| Authors: | S. McDonnell, University of Texas at Dallas B. Brennan, University of Texas at Dallas E. Bursa, University of Texas at Dallas K. Winkler, Omicron NanoTechnology, Germany P. Baumann, Omicron NanoTechnology, Germany R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
GaSb is a III-V material with applications as a potential channel material for p-type metal-oxide-semiconductor field effect transistors,1 optoelectronics in the infrared region,2 quantum devices,3 and tunnel field effect transistors.4 Prior to application specific processing it is often necessary to remove the GaSb native oxide, which can be quite thick. Such oxides can inhibit subsequent epitaxy and also be a source of traps for devices as a result of defect levels in the energy gap.5 The thermal desorption of these oxides in ultra high vacuum has been examined in previous works, but is revisited in this study with dynamic-x-ray photoelectron spectroscopy (dynamic-XPS). Dynamic-XPS allows for the collection of core-level spectra in real time (i.e. data acquisition times are < 1 second). Combined with controlled heating, this allows for detailed chemical temperature-dependent chemical analysis to be carried out with temperature resolutions better than 1 Kelvin. The thermal decomposition of the native GaSb oxides is studied using dynamic-XPS. The expected transfer of oxygen from Sb-O to Ga-O before the eventual desorption of all oxides is observed. However an initial reaction resulting in the reduction of Sb2O3 along with the concurrent increase in both Ga2O3 and Sb2O4 is detected in the temperature range of 450-525 K. Using the relative changes in atomic concentrations of the chemical species observed, the initial reaction pathway is proposed.
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