AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP3
Synthesis and Characterization of Large-Area and Highly Crystalline Molybdenum Disulfide Atomic Layers by Chemical Vapor Deposition

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: 2D Materials Poster Session
Presenter: Yooseok Kim, Sungkyunkwan University, Republic of Korea
Authors: Y. Kim, Sungkyunkwan University, Republic of Korea
S.-H. Park, Sungkyunkwan University, Republic of Korea
J.S. Kim, Sungkyunkwan University, Republic of Korea
Y.H. Ko, Sungkyunkwan University, Republic of Korea
C. Jeon, Korea Basic Science Institute, Republic of Korea
C.-Y. Park, Sungkyunkwan University, Republic of Korea
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The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. In particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in mono-layers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. The transferability of MoS2 films onto other arbitrary substrates like SiO2/Si makes our MoS2 a perfect candidate for engineering a variety of applications in nanoelectronics and optoelectronics. Furthermore, this thermal reduction-sulfurization method of synthesizing large WS2 could now be implemented for the synthesis of other TMDs such as WSe2, MOSe2, NbS2, NbS2, etc.