| AVS 61st International Symposium & Exhibition | |
| 2D Materials Focus Topic | Wednesday Sessions |
| Session 2D+EM+NS+SS+TF-WeM |
| Session: | Novel 2D Materials |
| Presenter: | Ludwig Bartels, University of California - Riverside |
| Authors: | E. Preciado, University of California - Riverside A. Nguyen, University of California - Riverside D. Barroso, University of California - Riverside V. Klee, University of California - Riverside S. Bobek, University of California - Riverside I. Lu, University of California - Riverside S. Naghibi, University of California - Riverside G. Von Son Palacio, University of California - Riverside T. Empante, University of California - Riverside K. Brown, University of California - Riverside K. Yang, University of California - Riverside A. Nguyen, University of California - Riverside J. Mann, University of California - Riverside L. Bartels, University of California - Riverside |
| Correspondent: | Click to Email |
The use of organic chalcogen precursors permits the CVD growth of MoS2(1-x)Se2x alloys of any composition between pure MoS2 and MoSe2 on SiO2. Spatially resolved vibrational and photoluminescence (PL) spectroscopy is used to characterize our samples: while we observe a continuous transition of the PL maximum with S: Se ratio, the vibrational modes behave in a more complicated, 2-mode fashion. Depending on growth conditions, compositional homogeneous and heterogeneous films can be prepared.
We present details of our growth processes and show to which extend patterns on the substrates can affect the resultant structures. The patterns range from simple hole and pillar arrays to complex waveguide structures. We find that holes to an underlying reducing substrate (silicon) are effective in seeding growth. In contrast, protrusions on the substrate have little effect, so that complex devices can be overgrown.
Ref: Mann et al., 2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1–x)Se2x Monolayers, Advanced Materials 26, 1399 (2014)