AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Monday Sessions
       Session 2D+EM+NS+PS+SS+TF-MoM

Paper 2D+EM+NS+PS+SS+TF-MoM4
Synthesis of Large Scale MoS2-Graphene Heterostructures

Monday, November 10, 2014, 9:20 am, Room 310

Session: 2D Materials Growth and Processing 
Presenter: Kathleen McCreary, Naval Research Laboratory
Authors: K.M. McCreary, Naval Research Laboratory
A.T. Hanbicki, Naval Research Laboratory
J. Robinson, Naval Research Laboratory
B.T. Jonker, Naval Research Laboratory
Correspondent: Click to Email

A rapidly progressing field involves the stacking of multiple two-dimensional materials to form heterostructures. These heterosctructures have exhibited unique and interesting properties. For the most part, heterostructure devices are produced via mechanical exfoliation requiring the careful aligning and stacking of the individual 2D layered components. This tedious and time consuming process typically limits lateral dimensions to micron-scale devices. Chemical vapor deposition (CVD) has proven to be a useful tool in the production of graphene and has very recently been investigated as a means for the growth of other 2D materials such as MoS2, MoSe2, WS2, WSe2 and hexagonal boron nitride. Using a two-step CVD process we are able to synthesize MoS2 on CVD grown graphene. AFM, Raman spectroscopy, and Photoluminescence spectroscopy of the MoS2-graphene heterostructure show a uniform and continuous film on the cm scale.