Invited Paper 2D+EM+MI+MN+NS+SS+TF-ThA1
Optoelectronics of Two-Dimensional Semiconductors

Thursday, November 13, 2014, 2:20 pm, Room 310

Two dimensional transition metal dichalcogenides are a recent addition to the 2D electronic materials family. They have shown outstanding electrical and optical properties for new optoelectronic device concepts. In this talk, we will first discuss the unique interplay between spin, valley, and layer pseudospins in bilayer WSe₂. Such coupling effects lead to electrical control of spin states and optical generation of valley coherence through interlayer trions, where electrons and holes are localized in different layers. We will then talk about optoelectronic devices based on monolayer WSe₂, including p-n junctions as light emitting diodes and hybrid monolayer semiconductor/photonic crystal cavity devices. We will conclude the talk with a discussion of the optoelectronic properties of MoSe₂-WSe₂ heterostructures.